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Conference Papers Year : 2020

Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructure

Abstract

Ultra wide band gap (UWBG) materials such as AlN are part of a class of materials that have a larger band gap than conventional wide band gap (WBG) materials such as GaN, allowing higher operating voltages. In this work we present the fabrication and DC / high voltage characterizations of AlN/AlGaN/AlN double heterostructure that are regrown by metalorganic chemical vapor deposition on AlN/sapphire. A buffer breakdown about 1100V with low leakage current for a spacing below 2µm is reported, which corresponds to a breakdown field about 6 MV/cm. Furthermore, transistors have been successfully fabricated on this heterostructure with low leakage current and low on-resistance. A breakdown voltage of 4.5kV with an off-state leakage current below 0.1 µA/mm have been indeed achieved. These results that AlGaN-channel HEMTs are promising for high power, high temperature future applications.
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Dates and versions

hal-03044195 , version 1 (07-12-2020)

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Idriss Abid, Riad Kabouche, F Medjdoub, Sven Besendörfer, Elke Meissner, et al.. Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructure. 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD 2020), Sep 2020, Vienne, Austria. pp.310-312, ⟨10.1109/ISPSD46842.2020.9170170⟩. ⟨hal-03044195⟩
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