Investigation of Temperature, Well Width and Composition Effects on the Intersubband Absorption of InGaAs/GaAs Quantum Wells
Résumé
Optical properties of the ternary InxGa1-xAs/GaAs alloys including strain, band gap energy, band offsets, and intersubband absorption coefficient in the conduction band (CB) are theoretically investigated. Effect of temperature, T, and Indium composition, In, of InGaAs on all these parameters is verified. The calculations show that the insertion of indium in the host material, varying the well width, Lw, and changing temperature has pronounced effects on the optical intersubband coefficient of the InGaAs quantum well (QW) structure. These results make the InxGa1-xAs/GaAs alloy promising for realization of mid-infrared devices.