Investigation of Temperature, Well Width and Composition Effects on the Intersubband Absorption of InGaAs/GaAs Quantum Wells - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2020

Investigation of Temperature, Well Width and Composition Effects on the Intersubband Absorption of InGaAs/GaAs Quantum Wells

Résumé

Optical properties of the ternary InxGa1-xAs/GaAs alloys including strain, band gap energy, band offsets, and intersubband absorption coefficient in the conduction band (CB) are theoretically investigated. Effect of temperature, T, and Indium composition, In, of InGaAs on all these parameters is verified. The calculations show that the insertion of indium in the host material, varying the well width, Lw, and changing temperature has pronounced effects on the optical intersubband coefficient of the InGaAs quantum well (QW) structure. These results make the InxGa1-xAs/GaAs alloy promising for realization of mid-infrared devices.
Fichier non déposé

Dates et versions

hal-03043560 , version 1 (07-12-2020)

Identifiants

Citer

Lynda Chenini, Abdelkader Aissat, Sofiane Ammi, Jean-Pierre Vilcot. Investigation of Temperature, Well Width and Composition Effects on the Intersubband Absorption of InGaAs/GaAs Quantum Wells. 2nd International Conference on Electronic Engineering and Renewable Energy Systems, Apr 2020, Saidia, Morocco. pp.325-332, ⟨10.1007/978-981-15-6259-4_34⟩. ⟨hal-03043560⟩
26 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More