Quantum Hall resistance standard in graphene grown by CVD on SiC: state-of-the-art of the experimental mastery - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2018

Quantum Hall resistance standard in graphene grown by CVD on SiC: state-of-the-art of the experimental mastery

Résumé

A few years ago, we demonstrated that graphene can markedly surpass GaAs/AlGaAs semiconductor heterostructures for the implementation of the quantum Hall resistance standard in relaxed experimental conditions, while preserving a state-of-the-art accuracy [1]. This paper describes supplementary quantum transport experiments performed on a significant number of graphene based quantum Hall devices obtained from graphene grown by CVD on SiC, like the one used for the above-mentioned demonstration, and with similar process and preparation. The objectives were to investigate the sample-to-sample reproducibility of the electronic properties and device performance, the structural key control parameter and the underpinning physics.
Fichier non déposé

Dates et versions

hal-03037687 , version 1 (03-12-2020)

Identifiants

  • HAL Id : hal-03037687 , version 1

Citer

J. Brun-Picard, R. Dagher, D. Mailly, A. Nachawaty, Benoit Jouault, et al.. Quantum Hall resistance standard in graphene grown by CVD on SiC: state-of-the-art of the experimental mastery. 2018 CONFERENCE ON PRECISION ELECTROMAGNETIC MEASUREMENTS (CPEM 2018), 2018, 345 E 47TH ST, NEW YORK, NY 10017 USA, Unknown Region. ⟨hal-03037687⟩
24 Consultations
0 Téléchargements

Partager

Gmail Facebook X LinkedIn More