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Communication Dans Un Congrès Année : 2012

Almost free standing Graphene on SiC(000-1) and SiC(11-20)

Résumé

We present the growth and characterization of epitaxial Graphene on the (000-1) and (11-20) planes. In both cases, the growth was carried out in a RF furnace, by implementing our technique of confined atmosphere, covering the SiC substrate with a graphitic cap during the growth. The grown material was investigated by means of AFM, SEM, Raman spectroscopy and magneto transport. Contrary to the (0001) face, in both faces (000-1) and (11-20), almost free standing Graphene monolayers of very high quality are grown. These Graphene sheet are uniform, continuous, almost strain-free and lightly doped. In both faces, Hall bars were fabricated and Shubnikov-de Haas oscillations typical of Graphene, as well as the Half Integer Quantum Hall Effect are observed.
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Dates et versions

hal-03037523 , version 1 (03-12-2020)

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Bilal Jabakhanji, Nicolas Camara, Alessandra Caboni, Christophe Consejo, Benoit Jouault, et al.. Almost free standing Graphene on SiC(000-1) and SiC(11-20). HETEROSIC & WASMPE 2011, 2011, KREUZSTRASSE 10, 8635 DURNTEN-ZURICH, Switzerland. pp.235+, ⟨10.4028/www.scientific.net/MSF.711.235⟩. ⟨hal-03037523⟩
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