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Communication Dans Un Congrès Année : 2012

Structural and Electrical Properties of Graphene Films Grown by Propane/Hydrogen CVD on 6H-SiC(0001)

Résumé

We have grown graphene on SiC(0001) using propane-hydrogen CVD. In this work, we present the effects of growth pressure and temperature on structural and electrical properties. Structural characterizations evidence the formation of graphene with in-plane rotational disorder, except for low growth pressure and high growth temperature which lead to the formation of a (6 root 3x6 root 3)-30 degrees interface between graphene and SiC. Electrical properties of samples presenting different graphene/SiC stacking and interfaces are compared and discussed.

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Dates et versions

hal-03037521 , version 1 (03-12-2020)

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A. Michon, E. Roudon, M. Portail, Benoit Jouault, S. Contreras, et al.. Structural and Electrical Properties of Graphene Films Grown by Propane/Hydrogen CVD on 6H-SiC(0001). SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, KREUZSTRASSE 10, 8635 DURNTEN-ZURICH, Switzerland. pp.625+, ⟨10.4028/www.scientific.net/MSF.717-720.625⟩. ⟨hal-03037521⟩
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