Article Dans Une Revue Nature Electronics Année : 2020

Single artificial atoms in silicon emitting at telecom wavelengths

Walid Redjem
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Alrik Durand
Jan Meijer
Bernard Gil
Anaïs Dréau

Résumé

Given its potential for integration and scalability, silicon is likely to be a key platform for large-scale quantum technologies. Individual electron-encoded artificial atoms, formed by either impurities or quantum dots, have emerged as a promising solution for silicon-based integrated quantum circuits. However, single qubits featuring an optical interface, which is needed for long-distance exchange of information, have not yet been isolated in silicon. Here we report the isolation of single optically active point defects in a commercial silicon-on-insulator wafer implanted with carbon atoms. These artificial atoms exhibit a bright, linearly polarized single-photon emission with a quantum efficiency of the order of unity. This single-photon emission occurs at telecom wavelengths suitable for long-distance propagation in optical fibres. Our results show that silicon can accommodate single isolated optical point defects like in wide-bandgap semiconductors, despite a small bandgap (1.1 eV) that is unfavourable for such observations.

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hal-03036607 , version 1 (08-03-2021)

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Walid Redjem, Alrik Durand, Tobias Herzig, Abdennacer Benali, Sébastien Pezzagna, et al.. Single artificial atoms in silicon emitting at telecom wavelengths. Nature Electronics, 2020, 3 (12), pp.738-743. ⟨10.1038/s41928-020-00499-0⟩. ⟨hal-03036607⟩
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