Strong Coupling of Exciton-Polaritons in a Bulk GaN Planar Waveguide: Quantifying the Coupling Strength - Archive ouverte HAL Access content directly
Journal Articles Physical Review Applied Year : 2020

Strong Coupling of Exciton-Polaritons in a Bulk GaN Planar Waveguide: Quantifying the Coupling Strength

Christelle Brimont
Laetitia Doyennette
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G. Kreyder
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F. Reveret
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P. Disseix
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F. Medard
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J. Leymarie
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E. Cambril
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S. Bouchoule
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M. Gromovyi
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B. Alloing
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S. Rennesson
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F. Semond
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J. Zuniga-Perez
Thierry Guillet

Abstract

We investigate the demonstration and quantification of the strong coupling between excitons and guided photons in a GaN slab waveguide. The dispersions of waveguide polaritons are measured from T = 6 to 300 K through gratings. They are carefully analyzed within four models based on different assumptions, in order to assess the strong-coupling regime. We prove that the guided photons and excitons are strongly coupled at all investigated temperatures, with a small (11%) dependence on the temperature. However, the values of the Rabi splitting strongly vary among the four models: the "coupled oscillator" model overestimates the coupling; the analytical "Elliott-Tanguy" model precisely describes the dielectric susceptibility of GaN near the excitonic transition, leading to a Rabi splitting equal to 82 ± 10 meV for fundamental transverse-electric mode; the experimental ellipsometry-based model leads to smaller values of 55 ± 6 meV. We evidence that, for waveguides including active layers with large oscillator strengths, as required for room-temperature polaritonic devices, a strong bending of the modes' dispersion is not necessarily the signature of the strong coupling, which requires for its reliable assessment a precise analysis of the material dielectric susceptibility.
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hal-03034132 , version 1 (01-12-2020)

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Christelle Brimont, Laetitia Doyennette, G. Kreyder, F. Reveret, P. Disseix, et al.. Strong Coupling of Exciton-Polaritons in a Bulk GaN Planar Waveguide: Quantifying the Coupling Strength. Physical Review Applied, 2020, 14 (5), pp.4060. ⟨10.1103/physrevapplied.14.054060⟩. ⟨hal-03034132⟩
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