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Communication Dans Un Congrès Année : 2017

Importance of buffer configuration in GaN HEMTs for high microwave performance and robustness

Résumé

We report on a comparison of the ultrathin (sub-10 nm barrier thickness) AlN/GaN heterostructure using two types of buffer layers: 1) carbon doped GaN high electron mobility transistors (HEMTs) and 2) double heterostructure field effect transistor (DHFET). It is observed that the carbon doped HEMT structure shows better electrical characteristics, with a maximum drain current density Id of 1.3 A/mm, a transconductance Gm of 500 mS/mm and a maximum oscillation frequency fmax of 234 GHz while using a gate length of 220 nm. The low trapping effects together with high frequency performance and excellent electron confinement under high bias enabled to achieve a state-of-the-art combination at 18 GHz of output power density (Pout > 6 W/mm) and power added efficiency (PAE) close to 40% at Vds as high as 30V. At 40 GHz, a PAE above 35% is still observed in spite of the rather large gate length. A key feature is the low gate leakage current of only few tenths of μA/mm that remains stable after many load-pull sweeps at various frequency in the case of carbon doped HEMT, which is attributed to a significant reduction of the self-heating as compared to the DHFET.
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Dates et versions

hal-03028460 , version 1 (27-11-2020)

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Romain Pécheux, Riad Kabouche, Ezgi Dogmus, Astrid Linge, Etienne Okada, et al.. Importance of buffer configuration in GaN HEMTs for high microwave performance and robustness. ESSDERC 2017 - 47th IEEE European Solid-State Device Research Conference (ESSDERC), Sep 2017, Leuven, Belgium. pp.228-231, ⟨10.1109/ESSDERC.2017.8066633⟩. ⟨hal-03028460⟩
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