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Communication Dans Un Congrès Année : 2015

High frequency high breakdown voltage GaN transistors

Résumé

In this work, high performance ultrathin barrier GaN devices for high frequency applications are presented. In particular, key features to achieve significant breakdown voltages and high robustness while using sub-10 nm barrier thickness are discussed. It is shown that the thickness of the in-situ SiN cap layer is critical for highly scaled GaN devices in order to avoid parasitic leakage current subsequent to the extra SiN ex-situ passivation.
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Dates et versions

hal-03028447 , version 1 (27-11-2020)

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F Medjdoub, Nicolas Herbecq, Astrid Linge, Malek Zegaoui. High frequency high breakdown voltage GaN transistors. 2015 IEEE International Electron Devices Meeting (IEDM), Dec 2015, Washington, United States. pp.9.2.1-9.2.4, ⟨10.1109/IEDM.2015.7409660⟩. ⟨hal-03028447⟩
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