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Article Dans Une Revue IEEE Microwave and Wireless Components Letters Année : 2017

Power Measurement Setup for On-Wafer Large Signal Characterization Up to Q-Band

Résumé

We report on the development of a nonlinear vector network analyzer power measurement setup for on-wafer large signal device characterization up to the Q-band. The setup can be used with various types of load pull (active, passive or hybrid) and enables measurements both in continuous wave and pulsed modes (1-μs pulsewidth and a duty cycle of 1%). Subsequently, state-of-The-Art power results at 40 GHz have been achieved on sub-10 nm barrier AlN/GaN high electron mobility transistors. Pulsed load-pull measurements allowed reaching an output power density at such high frequency above 6 W/mm together with high efficiency up to a drain voltage of 30 V while avoiding self-heating effects and thus gate leakage current degradation.
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Dates et versions

hal-03028333 , version 1 (27-11-2020)

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Riad Kabouche, Etienne Okada, Ezgi Dogmus, Astrid Linge, Malek Zegaoui, et al.. Power Measurement Setup for On-Wafer Large Signal Characterization Up to Q-Band. IEEE Microwave and Wireless Components Letters, 2017, 27 (4), pp.419-421. ⟨10.1109/LMWC.2017.2678424⟩. ⟨hal-03028333⟩
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