TCAD and EM co-simulation method to verify SiGe HBT measurements up to 500 GHz - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Solid-State Electronics Année : 2020

TCAD and EM co-simulation method to verify SiGe HBT measurements up to 500 GHz

Résumé

A systematic method for the verification of high frequency measurement (up-to 500 GHz) of silicon germanium heterojunction bipolar transistor (SiGe HBT) is proposed. First of all, the method involves an accurate estimation of the effects of passive environment on the overall measurement by a detailed electro-magnetic (EM) simulation. This ensures that the complete measurement environment like probes, pads and access lines along with the appropriate layouts are precisely included in the EM simulation framework. In order to additionally include the active device like SiGe HBTs, technology computer aided design (TCAD) tool is used to simulate the device S-parameters. TCAD simulation results are fed into an EM-plus-SPICE simulation framework to emulate a complete on-wafer measurement environment. The final simulation results show appreciable correlation with the on-wafer measurement data up-to 500 GHz.
Fichier principal
Vignette du fichier
Panda_2020_TCAD_and_EM.pdf (1.02 Mo) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)

Dates et versions

hal-03016002 , version 1 (20-11-2020)

Identifiants

Citer

Soumya Ranjan Panda, Sebastien Fregonese, Marina Deng, Anjan Chakravorty, Thomas Zimmer. TCAD and EM co-simulation method to verify SiGe HBT measurements up to 500 GHz. Solid-State Electronics, 2020, 174, pp.107915. ⟨10.1016/j.sse.2020.107915⟩. ⟨hal-03016002⟩
174 Consultations
66 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More