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Article Dans Une Revue Applied Physics Letters Année : 2020

Epsilon near-zero all-optical terahertz modulator

Résumé

We propose an efficient optically actuated THz modulator based on an ultrathin epsilon-near-zero (ENZ) slab photogenerated in an InAs semiconductor. We experimentally demonstrate a modulation depth of 90% at 1 THz obtained with a continuous laser at irradiation lower than 10 W cm À2. Beyond the strong attenuation of the THz transmission provided by the ENZ absorption effect, we also report a broadband modulation of the THz waves from 1 to 10 THz. In addition, our experimental results show that the cutoff frequency of 3 dB attains 2 MHz in the dynamic modulation regime.
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Dates et versions

hal-03009384 , version 1 (11-11-2021)

Identifiants

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E. Alvear-Cabezón, T. Taliercio, S. Blin, R. Smaali, F. Gonzalez-Posada, et al.. Epsilon near-zero all-optical terahertz modulator. Applied Physics Letters, 2020, 117 (11), pp.111101. ⟨10.1063/5.0012206⟩. ⟨hal-03009384⟩
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