Investigation on icp-cvd as a polyvalent low cost technology dedicated to low temperature μ-si tft prototyping.
Résumé
A Corial Inductively Coupled Plasma Chemical Vapor Deposition (ICP-CVD) system has been investigated to produce un-doped and doped μ-Si layers, as well as insulators, leading to a general capability of performing N and P type TFTs. This enables to develop rapid prototyping of TFTs. Resistivity of layers and TFT issues from ICP-CVD have been electrically characterized. © 2020 SID.