Piezoresistance in defect-engineered silicon
Heng Li
(1)
,
Abel Thayil
(1)
,
Chris Lew
(2)
,
Marcel Filoche
(1)
,
Brett Johnson
(2)
,
Jeff Mccallum
(2)
,
S. Arscott
(3, 4)
,
Alistair C. H. Rowe
(1)
Marcel Filoche
- Fonction : Auteur
- PersonId : 3943
- IdHAL : marcel-filoche
- ORCID : 0000-0001-8637-3016
- IdRef : 057608377
S. Arscott
- Fonction : Auteur
- PersonId : 739879
- IdHAL : stevearscott
- ORCID : 0000-0001-9938-2683
- IdRef : 144910691
Alistair C. H. Rowe
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- Fonction : Auteur correspondant
- PersonId : 739201
- IdHAL : alistair-rowe
- ORCID : 0000-0003-1048-3942
- IdRef : 148384854
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Résumé
The steady-state, space-charge-limited piezoresistance (PZR) of defect-engineered, silicon-on-insulator device layers containing silicon divacancy defects changes sign as a function of applied bias. Above a punch-through voltage (Vt) corresponding to the onset of a space-charge-limited hole current, the longitudinal ⟨110⟩ PZR π coefficient is π≈65×10−11 Pa−1, similar to the value obtained in charge-neutral, p-type silicon. Below Vt, the mechanical stress dependence of the Shockley-Read-Hall (SRH) recombination parameters, specifically the divacancy trap energy ET that is estimated to vary by approximately 30μV/MPa, yields π≈−25×10−11 Pa−1. The combination of space-charge-limited transport and defect engineering that significantly reduces SRH recombination lifetimes makes this work directly relevant to discussions of giant or anomalous PZR at small strains in nanosilicon whose characteristic dimension is larger than a few nanometers. In this limit the reduced electrostatic dimensionality lowers Vt and amplifies space-charge-limited currents and efficient SRH recombination occurs via surface defects. The results reinforce the growing evidence that in steady state, electromechanically active defects can result in anomalous, but not giant, PZR.
Format du dépôt | Fichier |
---|---|
Type de dépôt | Article dans une revue |
Titre |
en
Piezoresistance in defect-engineered silicon
|
Résumé |
en
The steady-state, space-charge-limited piezoresistance (PZR) of defect-engineered, silicon-on-insulator device layers containing silicon divacancy defects changes sign as a function of applied bias. Above a punch-through voltage (Vt) corresponding to the onset of a space-charge-limited hole current, the longitudinal ⟨110⟩ PZR π coefficient is π≈65×10−11 Pa−1, similar to the value obtained in charge-neutral, p-type silicon. Below Vt, the mechanical stress dependence of the Shockley-Read-Hall (SRH) recombination parameters, specifically the divacancy trap energy ET that is estimated to vary by approximately 30μV/MPa, yields π≈−25×10−11 Pa−1. The combination of space-charge-limited transport and defect engineering that significantly reduces SRH recombination lifetimes makes this work directly relevant to discussions of giant or anomalous PZR at small strains in nanosilicon whose characteristic dimension is larger than a few nanometers. In this limit the reduced electrostatic dimensionality lowers Vt and amplifies space-charge-limited currents and efficient SRH recombination occurs via surface defects. The results reinforce the growing evidence that in steady state, electromechanically active defects can result in anomalous, but not giant, PZR.
|
Auteur(s) |
Heng Li
1
, Abel Thayil
1
, Chris Lew
2
, Marcel Filoche
1
, Brett Johnson
2
, Jeff Mccallum
2
, S. Arscott
3, 4
, Alistair C. H. Rowe
1
1
LPMC -
Laboratoire de physique de la matière condensée
( 1162 )
- Route de Saclay 91128 PALAISEAU CEDEX
- France
2
University of Melbourne
( 306322 )
- Parkville VIC 3010
- Australie
3
IEMN -
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
( 1066983 )
- [Univ. Lille, CNRS, Centrale Lille Institut, Junia, Univ. Polytechnique Hauts-de-France] ––
Laboratoire Central – Cité Scientifique – Avenue Poincaré – CS 60069 – 59652 VILLENEUVE D’ASCQ CEDEX
- France
4
NAM6 - IEMN -
Nano and Microsystems - IEMN
( 1066996 )
- Groupe NAM6 - (Micro et Nano Systèmes) - IEMN UMR8520
- France
|
Langue du document |
Anglais
|
Nom de la revue |
|
Vulgarisation |
Non
|
Comité de lecture |
Oui
|
Audience |
Internationale
|
Date de publication |
2021-01
|
Date de publication électronique |
2021-01-25
|
Volume |
15
|
Numéro |
1
|
Page/Identifiant |
014046, 9 pages
|
Domaine(s) |
|
Financement |
|
Projet(s) ANR |
|
arXiv Id | 2008.04788v3 |
DOI | 10.1103/PhysRevApplied.15.014046 |
Origine :
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