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Article Dans Une Revue Journal of Materials Science Année : 2020

Thermal annealing of AlN films for piezoelectric applications

Résumé

Abstract Aluminum nitride is an excellent electrical insulator and important piezoelectric material making it suitable for a wide range of applications in electronics and optoelectronics. However, to exhibit and preserve those piezoelectric properties, care has to be taken during manufacturing process. Indeed, the c-axis crystalline orientation of AlN is a necessary condition for piezoelectricity. Therefore, the goal of this paper is to compare AlN films grown on (100) silicon substrate by pulsed reactive DC sputtering at 400 °C on top of three different metallic underlayer electrodes (Ti/Pt, Cr/Pt, and AlN/Cr/Pt) by preserving the crystalline properties not only at room temperature but also at high temperatures. Among all deposited AlN films on top of the metallic underlayer electrode, only AlN/Cr/Pt has kept its crystallinity up to 950 °C.
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Dates et versions

hal-02993821 , version 1 (07-11-2020)

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  • HAL Id : hal-02993821 , version 1

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Etienne Herth, D Fall, Jean-Yves Rauch, Virginie Mourtalier, G Guisbiers. Thermal annealing of AlN films for piezoelectric applications. Journal of Materials Science, 2020, 31, pp.4473 - 4478. ⟨hal-02993821⟩
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