A SIMULATION SYSTEM FOR A POWER INSULATED GATE BIPOLAR TRANSISTOR (IGBT) WITH TSUPREM-4 AND MEDICI SIMULATORS - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 1995

A SIMULATION SYSTEM FOR A POWER INSULATED GATE BIPOLAR TRANSISTOR (IGBT) WITH TSUPREM-4 AND MEDICI SIMULATORS

Résumé

An effective simulation system with TSUPREM-4 TM and MEDICI TM simulators has been set up in this paper to simulate structures and electrical characteristics, and further to give an optimum design of a power insulated gate bipolar transistor. The latch-up effect of the device is also simulated and analyzed in different practical cases.

Domaines

Electronique
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Dates et versions

hal-02968512 , version 1 (15-10-2020)

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  • HAL Id : hal-02968512 , version 1

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Shan-Qi Zhao, Dominique Planson, Jean-Pierre Chante. A SIMULATION SYSTEM FOR A POWER INSULATED GATE BIPOLAR TRANSISTOR (IGBT) WITH TSUPREM-4 AND MEDICI SIMULATORS. 7th European Simulation Symposium (ESS-1995), Oct 1995, Erlangen-Nuremberg, Germany. ⟨hal-02968512⟩
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