A SIMULATION SYSTEM FOR A POWER INSULATED GATE BIPOLAR TRANSISTOR (IGBT) WITH TSUPREM-4 AND MEDICI SIMULATORS
Résumé
An effective simulation system with TSUPREM-4 TM and MEDICI TM simulators has been set up in this paper to simulate structures and electrical characteristics, and further to give an optimum design of a power insulated gate bipolar transistor. The latch-up effect of the device is also simulated and analyzed in different practical cases.
Domaines
Electronique
Origine : Fichiers produits par l'(les) auteur(s)
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