Article Dans Une Revue IEEE Transactions on Electron Devices Année : 2020

Controlling the effective channel thickness of junctionless transistors by substrate bias

Résumé

Substrate-bias-affected unique electrical characteristics of junctionless transistors (JLTs) were investigated in detail. Bulk channel thickness of JLTs (t$_{si_eff}$) was effectively modulated by back-gate bias (V$_{gb}$). The variation in threshold voltage (V$_{th}$) and mobility degradation were observed in the reduced t$_{si_eff}$ , due to the negative V$_{gb}$ -induced depletion of free electrons. The V$_{gb}$ effect was also influenced significantly by the doping concentration in JLTs. In addition, numerical simulations verified those results and analytical equations explained well the experimental results

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Dates et versions

hal-02963340 , version 1 (30-08-2022)

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Dae-Young Jeon, Mireille Mouis, Sylvain Barraud, Gérard Ghibaudo. Controlling the effective channel thickness of junctionless transistors by substrate bias. IEEE Transactions on Electron Devices, 2020, 67 (11), pp.4736 - 4740. ⟨10.1109/TED.2020.3020284⟩. ⟨hal-02963340⟩
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