Controlling the effective channel thickness of junctionless transistors by substrate bias
Résumé
Substrate-bias-affected unique electrical characteristics of junctionless transistors (JLTs) were investigated in detail. Bulk channel thickness of JLTs (t$_{si_eff}$) was effectively modulated by back-gate bias (V$_{gb}$). The variation in threshold voltage (V$_{th}$) and mobility degradation were observed in the reduced t$_{si_eff}$ , due to the negative V$_{gb}$ -induced depletion of free electrons. The V$_{gb}$ effect was also influenced significantly by the doping concentration in JLTs. In addition, numerical simulations verified those results and analytical equations explained well the experimental results
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