A 4-Terminal Method for Oxide and Semiconductor Trap Characterization in FDSOI MOSFETs - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2019

A 4-Terminal Method for Oxide and Semiconductor Trap Characterization in FDSOI MOSFETs

Résumé

In this work, we present an experimental method that allows for a proper distinction between oxide (front or back) and semiconductor traps in FDSOI MOSFETs, using all four bias terminals. To this end, two cases of Random Telegraph Noise (RTN) measured signals are studied. It is shown that this method can also be used to localize the trap across the channel. Furthermore, the trap's electrostatic impact is proven to be misleading when it comes to trap localization in nanoscale devices.
Fichier principal
Vignette du fichier
ICNF_2019_Full_Paper_60.pdf (731.44 Ko) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)
Loading...

Dates et versions

hal-02963338 , version 1 (16-10-2020)

Identifiants

  • HAL Id : hal-02963338 , version 1

Citer

Hung Chi Han, Christoforos Theodorou, Gérard Ghibaudo. A 4-Terminal Method for Oxide and Semiconductor Trap Characterization in FDSOI MOSFETs. 25th International Conference on Noise and Fluctuations ICNF 2019, EPFL, Jun 2019, Neuchatel, Switzerland. ⟨hal-02963338⟩
58 Consultations
38 Téléchargements

Partager

Gmail Facebook X LinkedIn More