A 4-Terminal Method for Oxide and Semiconductor Trap Characterization in FDSOI MOSFETs
Résumé
In this work, we present an experimental method that allows for a proper distinction between oxide (front or back) and semiconductor traps in FDSOI MOSFETs, using all four bias terminals. To this end, two cases of Random Telegraph Noise (RTN) measured signals are studied. It is shown that this method can also be used to localize the trap across the channel. Furthermore, the trap's electrostatic impact is proven to be misleading when it comes to trap localization in nanoscale devices.
Origine : Fichiers produits par l'(les) auteur(s)
Loading...