Article Dans Une Revue IEEE Transactions on Electron Devices Année : 2014

Mobility Improvement Study for 8-Å-EOT HfO₂ UTBB-FD-SOI MOSFET Based on the Direct Extraction of the Back-Channel Mobility

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hal-02952199 , version 1 (29-09-2020)

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Lionel Trojman, Lars-Åke Ragnarsson, Nadine Collaert. Mobility Improvement Study for 8-Å-EOT HfO₂ UTBB-FD-SOI MOSFET Based on the Direct Extraction of the Back-Channel Mobility. IEEE Transactions on Electron Devices, 2014, 61 (11), pp.3632-3638. ⟨10.1109/TED.2014.2357673⟩. ⟨hal-02952199⟩

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