Finite tunnel magnetoresistance at the compensation point of Sm1xGdxAl2, a ferromagnetic electrode with zero magnetization Related Articles - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Applied Physics Letters Année : 2011

Finite tunnel magnetoresistance at the compensation point of Sm1xGdxAl2, a ferromagnetic electrode with zero magnetization Related Articles

M da Silva
  • Fonction : Auteur
K Dumesnil
  • Fonction : Auteur
C Dufour
M Hehn
  • Fonction : Auteur
D Pierre
  • Fonction : Auteur
D Lacour
F. Montaigne
S. Robert
  • Fonction : Auteur

Résumé

A tunnel magnetoresistance effect is observed in magnetic tunnel junctions with an original zero magnetization ferromagnetic electrode composed of Sm1−xGdxAl2. A finite tunnel magnetoresistance is measured when the Sm1−xGdxAl2 electrode is in a magnetic compensated state proving that Sm1−xGdxAl2 with zero magnetization is able to give rise to a spin-polarized current. The temperature dependence of tunnel magnetoresistance reveals that this effect is related to the relative orientation of spin contributions to magnetic moment in both electrodes and that the tunnel polarization of the Sm1−xGdxAl2 electrode is negative.
Fichier principal
Vignette du fichier
11APL SGA.pdf (792.13 Ko) Télécharger le fichier
Origine : Fichiers éditeurs autorisés sur une archive ouverte
Loading...

Dates et versions

hal-02949054 , version 1 (25-09-2020)

Identifiants

Citer

M da Silva, K Dumesnil, C Dufour, M Hehn, D Pierre, et al.. Finite tunnel magnetoresistance at the compensation point of Sm1xGdxAl2, a ferromagnetic electrode with zero magnetization Related Articles. Applied Physics Letters, 2011, 98 (23), pp.232504. ⟨10.1063/1.3597625⟩. ⟨hal-02949054⟩
9 Consultations
21 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More