High-speed Pockels effect in strained silicon waveguide - Archive ouverte HAL Access content directly
Conference Papers Year : 2018

High-speed Pockels effect in strained silicon waveguide

Guillaume Marcaud
Pedro Damas
  • Function : Author
Xavier Le Roux
  • Function : Author
Carlos Alonso-Ramos
  • Function : Author
  • PersonId : 741127
  • IdHAL : carlosramos
Diego Pérez-Galacho
  • Function : Author
Vladyslav Vakarin
  • Function : Author
Paul Crozat
  • Function : Author
Daniel Benedikovic
  • Function : Author
Delphine Marris-Morini
Eric Cassan
Laurent Vivien

Abstract

Silicon photonics is being considered as the future photonic platform for low power consumption optical communications. However, silicon is a centrosymmetric crystal, i.e. silicon doesn't have Pockels effect. Nevertheless, breaking the crystal symmetry of silicon can be used to overcome this limitation. In this work, the crystal modification is achieved by depositing a SiN high-stress overlayer. Recent results on high-speed measurements will be presented and discussed. Both charge effects and Pockels effect induced under an electric field will be also analyzed.
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Dates and versions

hal-02936258 , version 1 (11-09-2020)

Identifiers

  • HAL Id : hal-02936258 , version 1

Cite

Mathias Berciano, Guillaume Marcaud, Pedro Damas, Xavier Le Roux, Carlos Alonso-Ramos, et al.. High-speed Pockels effect in strained silicon waveguide. Proceedings Volume 10536, Smart Photonic and Optoelectronic Integrated Circuits XX; 105360H (2018), Mar 2018, San Francisco, United States. ⟨hal-02936258⟩
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