Journal Articles
Microelectronic Engineering
Year : 2010
Yannick Guhel : Connect in order to contact the contributor
https://hal.science/hal-02936067
Submitted on : Friday, September 11, 2020-12:23:36 AM
Last modification on : Wednesday, March 9, 2022-2:14:03 PM
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- HAL Id : hal-02936067 , version 1
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Y. Guhel, B. Boudart, N. Vellas, Christophe Gaquière. ‘Power improvement of AlGaAs/InGaAs PHEMTs by using low gamma radiation dose’. Microelectronic Engineering, 2010. ⟨hal-02936067⟩
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