Journal Articles
Electronics Letters
Year : 2010
Yannick Guhel : Connect in order to contact the contributor
https://hal.science/hal-02936065
Submitted on : Friday, September 11, 2020-12:16:10 AM
Last modification on : Wednesday, March 9, 2022-2:14:03 PM
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- HAL Id : hal-02936065 , version 1
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Y. Guhel, B. Boudart, Christophe Gaquière, N. Vellas, J.L. Trolet, et al.. ‘DC electrical performances improvement of AlGaAs/InGaAs PHEMTs by using low thermal neutrons radiation dose’. Electronics Letters, 2010. ⟨hal-02936065⟩
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