‘Impact of a plasma pre-treatment before SiNx passivation on AlGaN-GaN HFET electrical behaviours’

Y. Guhel; B. Boudart; N. Vellas; Christophe Gaquière; E. Delos; D. Ducatteau; Z. Bougrioua; M. Germain

Journal Articles Solid-State Electronics Year : 2005

‘Impact of a plasma pre-treatment before SiNx passivation on AlGaN-GaN HFET electrical behaviours’

(1) , , , , , , ,

1

Y. Guhel

Function : Author

Laboratoire Universitaire des Sciences Appliquées de Cherbourg

B. Boudart

Function : Author

N. Vellas

Function : Author

Christophe Gaquière

Function : Author
PersonId : 746853
IdHAL : christophe-gaquiere
ORCID : 0000-0003-3082-2489
IdRef : 059765615

E. Delos

Function : Author

D. Ducatteau

Function : Author

Z. Bougrioua

Function : Author
PersonId : 180745
IdHAL : zahia-bougrioua
ORCID : 0000-0003-3579-7091
IdRef : 113374135

M. Germain

Function : Author

Domains

Engineering Sciences [physics]

Yannick Guhel : Connect in order to contact the contributor

https://hal.science/hal-02936059

Submitted on : Thursday, September 10, 2020-11:57:42 PM

Last modification on : Wednesday, March 9, 2022-2:14:03 PM

Dates and versions

hal-02936059 , version 1 (10-09-2020)

Identifiers

HAL Id : hal-02936059 , version 1

Cite

Y. Guhel, B. Boudart, N. Vellas, Christophe Gaquière, E. Delos, et al.. ‘Impact of a plasma pre-treatment before SiNx passivation on AlGaN-GaN HFET electrical behaviours’. Solid-State Electronics, 2005. ⟨hal-02936059⟩

‘Impact of a plasma pre-treatment before SiNx passivation on AlGaN-GaN HFET electrical behaviours’

Domains

Dates and versions

Identifiers

Cite

Export

Collections

Share