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Article Dans Une Revue Electronics Letters Année : 2001

Static measurements of GaN MESFETs on (111) Si substrates

Résumé

For the first time, to the knowledge of the authors, GaN MESFETs on silicon substrate have been realised using low-pressure metal-organic vapour phase epitaxy. The devices demonstrate good pinch-off voltage and good breakdown voltage characteristics. A maximum extrinsic transconductance of 30 mS/mm was achieved on a 100 * 0.5 µm2 device. At a drain-to-source voltage of 30 V, the drain current density reaches 100 mA/mm at Vgs = 0 V.
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Dates et versions

hal-02936047 , version 1 (10-09-2020)

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Virginie Hoel, Y. Guhel, B. Boudart, Christophe Gaquière, Jean-Claude de Jaeger, et al.. Static measurements of GaN MESFETs on (111) Si substrates. Electronics Letters, 2001, 37 (17), pp.1095 - 1096. ⟨10.1049/el:20010740⟩. ⟨hal-02936047⟩
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