2 W / mm power density of an AlGaN/GaN HEMT grown on free-standing GaN substrate at 40 GHz - Archive ouverte HAL Access content directly
Journal Articles Semiconductor Science and Technology Year : 2019

2 W / mm power density of an AlGaN/GaN HEMT grown on free-standing GaN substrate at 40 GHz

Abstract

In this letter, a record performance at 40 GHz obtained on AlGaN/GaN high electron mobility transistor (HEMT) grown on Hydride Vapor Phase Epitaxy (HVPE) Free-Standing GaN substrate is reported. An output power density of 2 W.mm-1 associated with 20.5 % power added efficiency and a linear power gain (Gp) of 4.2 dB is demonstrated for 70 nm gate length device. The device exhibits a maximum DC drain current density of 950 mA.mm-1 and a peak extrinsic transconductance (gm Max) of 300 mS.mm-1 at VDS = 6 V. A 100 GHz maximum intrinsic cutoff frequency fT, and a maximum intrinsic oscillation frequency f Max of 125 GHz are obtained from Sparameters measurement. This performance is very promising for HEMTs grown on Free-Standing GaN substrate.
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Dates and versions

hal-02929065 , version 1 (11-12-2020)

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Mohamed-Reda Irekti, Marie Lesecq, N. Defrance, Etienne Okada, Eric Frayssinet, et al.. 2 W / mm power density of an AlGaN/GaN HEMT grown on free-standing GaN substrate at 40 GHz. Semiconductor Science and Technology, 2019, 34 (12), pp.12LT01. ⟨10.1088/1361-6641/ab4e74⟩. ⟨hal-02929065⟩
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