For over a decade, single-junction perovskite solar cells (PSCs) have experienced an unprecedent increase in efficiencies and even offer opportunities to surpass the Shockley–Queisser limit in multijunction configuration. There is consequently an intense need for easily processable semi-transparent PSCs as a basis of affordable tandems. The current study reports the comparison of negative-intrinsic-positive (NIP) and positive-intrinsic-negative (PIN) architectures based on CH$_3$NH$_3$PbI$_3${Cl}-based perovskite. Both devices could be prepared with the same N-type (SnO$_2$ nanoparticles) and P-type (poly-triarylamine (PTAA) polymer) materials. Each layer (except for electrodes) was deposited using solvent-based low temperature processes, contrasting with other literature studies, especially SnO$_2$ for PIN-type purposes. A thorough experimental comparison of the two architectures reveals rather similar optical and structural properties for perovskites, whether deposited on an N- or P-type underlayer, with also comparable efficiencies in the final devices. A compatible deposition process for sputtered indium tin oxide (ITO) as a semi-transparent electrode was then performed for both architectures. Upon varying the illuminated devices’ side, the semi-transparent cells exhibited different photocurrent behaviors, the magnitude of which depended on the device’s architecture. In conclusion, despite slightly better efficiencies for the semi-transparent NIP-type devices, the semi-transparent PIN-type counterparts also appear to be optically attractive for (two-terminal) tandem applications.