Design and Integration of an O-band Silicon Nitride AWG for CWDM Applications
Abstract
Experimental demonstration of an O-band four channel CWDM silicon nitride AWG is reported. Specificity of low order array has been explored through multiple devices among which insertion loss below 2.3dB, crosstalk level as high as 37dB and polarization insensitive spectral response flattening is obtained.
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Design and Integration of an O-band Silicon Nitride AWG for CWDM Applications (1).pdf (439.22 Ko)
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