Relationship between classical and quantum lifetimes in AlGaN/GaN heterostructures - Archive ouverte HAL Access content directly
Journal Articles Semiconductor Science and Technology Year : 2001

Relationship between classical and quantum lifetimes in AlGaN/GaN heterostructures

J Harris
  • Function : Author
K Lee
  • Function : Author
T. Wang
  • Function : Author
S. Sakai
  • Function : Author
  • PersonId : 849429
Ingrid Moerman
  • Function : Author
  • PersonId : 868216
E Thrush
  • Function : Author
J Webb
  • Function : Author
Hao Tang
T Martin
Duncan Kennedy Maude
  • Function : Author
J-C Portal
  • Function : Author

Abstract

Carrier transport in a set of AlGaN/GaN heterostructures from different sources with a range of carrier densities and mobilities has been investigated at low temperature and high magnetic fields. The Shubnikov-de Haas oscillations have been analysed to extract the quantum scattering lifetime, τq, and this is compared with the classical transport lifetime, τt, derived from the low-field mobility. The relationship between these parameters has been observed to depend systematically on the low-field mobility of the samples studied, and indicates that higher-mobility samples suffer less scattering from centres close to the two-dimensional conducting channel.

Dates and versions

hal-02906503 , version 1 (24-07-2020)

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J Harris, K Lee, T. Wang, S. Sakai, Z. Bougrioua, et al.. Relationship between classical and quantum lifetimes in AlGaN/GaN heterostructures. Semiconductor Science and Technology, 2001, 16 (5), pp.402-405. ⟨10.1088/0268-1242/16/5/321⟩. ⟨hal-02906503⟩
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