Mobility Collapse in Undoped and Si‐Doped GaN Grown by LP‐MOVPE - Archive ouverte HAL Access content directly
Journal Articles physica status solidi (b) Year : 1999

Mobility Collapse in Undoped and Si‐Doped GaN Grown by LP‐MOVPE

J.-L Farvacque
  • Function : Author
Ingrid Moerman
  • Function : Author
  • PersonId : 868216
Piet Demeester
  • Function : Author
  • PersonId : 868218
J.J. Harris
  • Function : Author
K Lee
  • Function : Author
Gustaaf van Tendeloo
  • Function : Author
  • PersonId : 877073
Oleg Lebedev
E. J. Thrush
  • Function : Author
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Dates and versions

hal-02906475 , version 1 (24-07-2020)

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  • HAL Id : hal-02906475 , version 1

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Zahia Bougrioua, J.-L Farvacque, Ingrid Moerman, Piet Demeester, J.J. Harris, et al.. Mobility Collapse in Undoped and Si‐Doped GaN Grown by LP‐MOVPE. physica status solidi (b), 1999. ⟨hal-02906475⟩
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