Enhanced Wide-band Infrared Absorptivity of Black Silicon - Archive ouverte HAL Access content directly
Conference Papers Year : 2020

Enhanced Wide-band Infrared Absorptivity of Black Silicon


In the present work, we report, on the exceptionally high absorptivity of Black Silicon (BSi) in the spectral range of thermal radiation, which can be instrumental for various thermal radiation related applications. Having fabricated two wafers of BSi having n-type low and high doping, we have found experimentally that for highly doped BSi, a high absorptivity is observed till 15 µm which has also been compared with similarly doped Flat Si (FSi) samples. However, beyond 15 µm, the absorptivity of highly doped BSi sample decreases. Subsequent processing of SEM images reveals that these noteworthy radiative properties can probably be attributed to particular morphological features of heavily doped BSi at the nanoscale. These features are quantified through statistical image processing. Reported results pave the way to highly integrated and effective infrared sources using Black Silicon.
Fichier principal
Vignette du fichier
67_doi.pdf (1.18 Mo) Télécharger le fichier
Origin : Files produced by the author(s)

Dates and versions

hal-02902598 , version 1 (20-07-2020)



Sreyash Sarkar, Ahmed A Elsayed, Frédéric Marty, Jérémie Drevillon, Yasser M Sabry, et al.. Enhanced Wide-band Infrared Absorptivity of Black Silicon. Congrès Annuel de la Société Française de Thermique 2020, Jun 2020, Belfort, France. ⟨10.25855/SFT2020-067⟩. ⟨hal-02902598⟩
98 View
134 Download



Gmail Facebook X LinkedIn More