Sputtering of beryllium oxide by deuterium at various temperatures simulated with molecular dynamics
Résumé
The sputtering yield of beryllium oxide (BeO) by incident deuterium (D) ions, for energies from
10 eV to 200 eV, has been calculated for temperatures between 300 K and 800 K using classical
molecular dynamics. First, cumulative irradiations are carried out to build up a concentration of
D in the material, equal to the experimentally measured concentration, that varies from an atomic
fraction of 0.12 (300 K–500 K) to 0.02 (800 K). After building up the concentration of D, noncumulative
irradiations are carried out to estimate the sputtering yields of BeO. For all incident
energies, the sputtering yield peaks at 500 K, being closely related to the decrease of the
concentration of D above this temperature. At 10 eV, the concentration of D on the surface drives
the temperature dependence, while above 30 eV, it is the amount of surface damage created
during the cumulative irradiation.
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