Electrical control of optically pumped electron spin in a single GaAs/AlAs quantum dot fabricated by nanohole infilling - Archive ouverte HAL
Article Dans Une Revue Physical Review B: Condensed Matter (1978-1997) Année : 2020

Electrical control of optically pumped electron spin in a single GaAs/AlAs quantum dot fabricated by nanohole infilling

Résumé

We demonstrate here electrical control of the sign of the circularly polarized emission from the negatively charged trion, going from co-to contrapolarized with respect to the circular polarization of the laser, using a GaAs/AlAs quantum dot (QD) embedded in a field effect structure. The voltage range over which the trion is negatively (contra) circularly polarized is shown to be dependent on the laser excitation energy within the P-shell resonance. The negative polarization never exceeds ∼ − 15%, in stark contrast to measurements on InAs/GaAs QDs reported by M. E. Ware et al. [Phys. Rev. Lett. 95, 177403 (2005).] in which a negative polarization reaching −95% was observed. This result is shown to be a consequence of the low-symmetry confinement potential of these GaAs/AlAs QD, which are fabricated by partial infilling of asymmetric droplet-etched nanoholes. This low QD symmetry also leads to optical activity of the dark spin configuration of the triplet state, which we measure experimentally by photoluminescence excitation spectroscopy. A simple, semiquantitative model explaining both the optical activity of the dark spin configuration and the maximum degree of negative polarization is presented.
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hal-02891496 , version 1 (06-07-2020)

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S. Germanis, P Atkinson, R. Hostein, S. Suffit, F. Margaillan, et al.. Electrical control of optically pumped electron spin in a single GaAs/AlAs quantum dot fabricated by nanohole infilling. Physical Review B: Condensed Matter (1978-1997), 2020, 102, ⟨10.1103/PhysRevB.102.035406⟩. ⟨hal-02891496⟩
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