Importance and Requirement of frequency band specific RF probes EM Models in sub-THz and THz Measurements up to 500 GHz
Résumé
In this paper, we present on-silicon structures on-wafer measurements up to 500 GHz and a comprehensive electromagnetic (EM) simulation analysis to understand non-ideal behaviour in the measured data. The EM simulations are performed in such a way that the simulation setup remains very close to the physical measurement environment where a faithful true EM model of the RF probes is an essential requirement. In this process, four different RF probes used during measurements in the frequency bands 1 GHz-110 GHz, 140 GHz-220 GHz, 220 GHz-325 GHz and 325 GHz-500 GHz are designed in the EM simulator. We also highlight the importance of the frequency band specific probe models to develop a deep understanding of the problems encountered in the sub-THz and THz measurements.
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TRL Calibration and its Impact on Transistor Measurement_Final_version.pdf (2.91 Mo)
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