Characterization and kinetic monitoring of the reactions between TixAly phases in Ti-Al based ohmic contacts on n-type GaN by Differential Scanning Calorimetry (DSC) - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2013

Characterization and kinetic monitoring of the reactions between TixAly phases in Ti-Al based ohmic contacts on n-type GaN by Differential Scanning Calorimetry (DSC)

Résumé

This work reports on DSC measurements performed on Ti-Al metallic layers stacks deposited on n+-GaN. The aim is to get better understanding of the mechanisms leading to ohmic contact formation during the annealing stage. Two exothermic DSC peaks were found : one below 500°C and the other one around 660°C. They can be respectively attributed to Al3Ti and Al2Ti compounds formation. Lowest contact resistance is well correlated with the presence of Al3Ti compound, corresponding to Al(200nm) / Ti(50nm) stoichiometric ratio. Subsequently, Al (200 nm) / Ti(50 nm) stacks on n+-GaN were comparatively annealed from 400 °C to 650 °C. Specific Contact Resistivity (SCR) values stay in the mid 10-5 Ω.cm 2 range for annealing temperatures between 450 °C and 650 °C. Such low-temperature annealed contacts on n+-GaN may open new device processing routes, simpler and cheaper, in which Ohmic and Schottky contacts are annealed together.
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Dates et versions

hal-02865475 , version 1 (11-06-2020)

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Nicolas Thierry-Jebali, Rodica Chiriac, Christian Brylinski. Characterization and kinetic monitoring of the reactions between TixAly phases in Ti-Al based ohmic contacts on n-type GaN by Differential Scanning Calorimetry (DSC). 2013 19th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC), Sep 2013, Berlin, Germany. pp.372-375, ⟨10.1109/THERMINIC.2013.6675181⟩. ⟨hal-02865475⟩
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