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Article Dans Une Revue Microelectronics Reliability Année : 2020

Stable and reliable ohmic contact on p-type 4H-SiC up to 1500 h of aging at 600°C

Résumé

The stability and reliability at high temperature of Ti3SiC2 based ohmic contacts on p-type 4H-SiC (0001) 4°-off substrates were studied. The contact was grown from Ti100-xAlx alloys annealed at high temperature (from 900°C to 1200°C). The Specific Contact Resistance (SCR) at room temperature and at high temperature (up to 600°C) was in the 10-4-10-5 Ω.cm 2 range. A Schottky barrier height of 0.71 to 0.85 eV was calculated for the set of samples. After aging period at 600°C for 1500h, the SCR was very stable for Al contents x < 80 at%. This was correlated with chemical and physical stability of these contacts, where the residual stress located on 4H-SiC/Ti3SiC2 interface decreased after aging, for which the Ti3SiC2 phase was preserved. Whereas, in the case of x = 80 at%, the Ti3SiC2 phase disappeared and the contacts were not ohmic anymore after long time aging. The obtained results showed that Ti3SiC2/4H-SiC system is thermodynamically stable at high temperatures and can therefore be a good candidate, with high potential, for high power and high temperature electronic applications.
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Dates et versions

hal-02649858 , version 1 (29-05-2020)

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Valdemar Abou Hamad, Tony Abi Tannous, Maher Soueidan, Laurent Gremillard, Damien Fabrègue, et al.. Stable and reliable ohmic contact on p-type 4H-SiC up to 1500 h of aging at 600°C. Microelectronics Reliability, 2020, 110, pp.113694. ⟨10.1016/j.microrel.2020.113694⟩. ⟨hal-02649858⟩
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