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Article Dans Une Revue Journal of Crystal Growth Année : 2002

Competition between As and P for incorporation during gas-source molecular beam epitaxy of InGaAsP

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hal-02552828 , version 1 (23-04-2020)

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R. Andre, S. Wey, C.W. Tu. Competition between As and P for incorporation during gas-source molecular beam epitaxy of InGaAsP. Journal of Crystal Growth, 2002, 235 (1-4), pp.65-72. ⟨10.1016/S0022-0248(01)01789-4⟩. ⟨hal-02552828⟩

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