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Journal Articles Applied Sciences Year : 2020

High-frequency limits of graphene field-effect transistors with velocity saturation

Quentin Wilmart
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  • PersonId : 974258
Holger Graef
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  • PersonId : 1067053
José Palomo
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  • PersonId : 1312478
Takashi Taniguchi
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  • PersonId : 1027334

Abstract

The current understanding of physical principles governing electronic transport in graphene field effect transistors (GFETs) has reached a level where we can model quite accurately device operation and predict intrinsic frequency limits of performance. In this work, we use this knowledge to analyze DC and RF transport properties of bottom-gated graphene on boron nitride field effect transistors exhibiting pronounced velocity saturation by substrate hyperbolic phonon polariton scattering, including Dirac pinch-off effect. We predict and demonstrate a maximum oscillation frequency exceeding 20 GHz. We discuss the intrinsic 0.1 THz limit of GFETs and envision plasma resonance transistors as an alternative for sub-THz narrow-band detection.
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Dates and versions

hal-02520621 , version 1 (26-03-2020)

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Quentin Wilmart, Mohamed Boukhicha, Holger Graef, David Mele, José Palomo, et al.. High-frequency limits of graphene field-effect transistors with velocity saturation. Applied Sciences, 2020, 10 (2), pp.446. ⟨10.3390/app10020446⟩. ⟨hal-02520621⟩
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