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Communication Dans Un Congrès Année : 2020

Analysis and Design of X-Band LNA Using Parallel Technique

Résumé

In this paper, a new method based on parallel amplifier design technique for low noise amplifiers (LNA) is investigated in order to improve the linearity and noise figure (NF). Considering two inductively degenerated common source (IDCS) topology as parallel networks, the minimum noise figure (NFmin) and optimum noise impedance (Zsopt) and Rn (equivalent noise resistance) are calculated. Simulation result for the designed 8-11 GHz LNA with the 0.1-μm pseudomorphic GaAs HEMT model is reported to support proposed theories.
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Dates et versions

hal-02504722 , version 1 (11-03-2020)

Identifiants

  • HAL Id : hal-02504722 , version 1

Citer

Masoumeh Sabzi, Mahmoud Kamarei, Tchanguiz Razban, Yann Mahé. Analysis and Design of X-Band LNA Using Parallel Technique. Iranian Conference on Electrical Engineering, May 2020, Tabriz, Iran. Paper icee28-01800071. ⟨hal-02504722⟩
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