Co-integration of Enhancement and Depletion Modes of GaN-based Transistors for Next Generation RF Communication Circuits - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2019

Co-integration of Enhancement and Depletion Modes of GaN-based Transistors for Next Generation RF Communication Circuits

Domaines

Electronique
Fichier non déposé

Dates et versions

hal-02502499 , version 1 (09-03-2020)

Identifiants

  • HAL Id : hal-02502499 , version 1

Citer

N. Defrance, Etienne Okada, Florent Albany, Nathalie Labat, Nathalie Malbert, et al.. Co-integration of Enhancement and Depletion Modes of GaN-based Transistors for Next Generation RF Communication Circuits. WOCSDICE 2019, Jun 2019, Cabourg, France. ⟨hal-02502499⟩
80 Consultations
0 Téléchargements

Partager

Gmail Facebook X LinkedIn More