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Article Dans Une Revue Physical Review Materials Année : 2019

Topological band crossings in epitaxial strained SnTe

Résumé

Epitaxial SnTe (111) is grown by molecular-beam epitaxy on Bi 2 Te 3 substrates. Structural evaluation indicates that SnTe deviates from cubic due to in-plane compressive strain, which induces significant changes in the electronic band structure. More specifically, a pair of gapless crossings between the two uppermost valence bands occurs in k space along the out-of-plane Z direction of the Brillouin zone, associated with a band inversion, thus defining topological three-dimensional Dirac nodes. Combined first-principles calculations and angle-resolved photoelectron spectroscopy reveal an overtilted Dirac cone indicating that the crossing is a topological type-III Dirac node at the borders between type-I and type-II Dirac nodes.
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Dates et versions

hal-02491506 , version 1 (26-02-2020)

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Sotirios Fragkos, Roberto Sant, Carlos Alvarez, Evangelos Golias, Jose Marquez-Velasco, et al.. Topological band crossings in epitaxial strained SnTe. Physical Review Materials, 2019, 3 (10), pp.104201. ⟨10.1103/PhysRevMaterials.3.104201⟩. ⟨hal-02491506⟩
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