Characteristics of a-IGZO TFT with SU-8 Gate Insulator as Various Hard-bake Temperature - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2017
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hal-02483240 , version 1 (18-02-2020)

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  • HAL Id : hal-02483240 , version 1

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Mintaek Hong, Moon Seungjae, Jongseok Lee, Tayeb Mohammed-Brahim, Euijung Yun, et al.. Characteristics of a-IGZO TFT with SU-8 Gate Insulator as Various Hard-bake Temperature. International Conference on Advanced Electromaterials, ICAE2017, Nov 2017, Jeju, South Korea. ⟨hal-02483240⟩
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