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Communication Dans Un Congrès Année : 2017

High Frequency Device Characterization and Modeling for THz applications Under MHRD Scheme on Global Initiative on Academic Network (GIAN)

Résumé

The field of THz waves is perceived as the new Eldorado in the scientific field and largely unexplored. For decades, the part of the THz spectrum (100GHz to 1THz) was only used in niche applications and fundamental research. Only recently, thanks to the fabrication of high-speed SiGe and InP HBT devices, the scientific community is starting to explore device operation in this frequency range and design THz circuits and systems. At such higher frequencies, parasitic resistances and capacitances start dominating the device characteristics. Thus high frequency characterization with proper calibration and de-embedding techniques are active areas of research. Large-area graphene (2-D material) is gaining momentum as a viable channel material for FET fabrication because of its impressive electrical properties like higher intrinsic mobility and higher cutoff frequency (fT – few hundreds of GHz). Broadband RF mixer and frequency multiplier circuits based on graphene transistors are already reported in the literature. Future SiGe- and InP-THz technologies will enable new electronic applications with socio-economic relevance and spur economic growth in emerging mm-wave and THz markets. They impact applications like: Biology, medical and pharmaceutical (THz-Imaging), Automotive applications (collision avoidance radar) and Wireless Communications (short distance). This course will cover variety of topics related to THz devices such as – Introduction to THz Electronics and applications, Measurement challenges at high frequencies, calibration and de-embedding techniques, High frequency/speed devices – MOSFET, Diode and HBTs, Circuit design in THz regime and device modeling, Parameter extraction procedure, Electro-thermal effects and their characterization with pulse, DC, AC and RF measurements, Next generation THz devices: Graphene and 2D-devices, Opportunities, challenges and solutions in THz devices and circuits.
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Dates et versions

hal-02475467 , version 1 (30-06-2020)

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  • HAL Id : hal-02475467 , version 1

Citer

Thomas Zimmer, Yogesh Singh Chauhan. High Frequency Device Characterization and Modeling for THz applications Under MHRD Scheme on Global Initiative on Academic Network (GIAN). IEEE Workshop on Compact Modeling, Mar 2017, Kanpur, India. ⟨hal-02475467⟩
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