Motion dynamics of Si (100) positive and negative islands under electromigration and thermomigration
Résumé
Mass transport processes play an important role in nano devices. They determine the morphology and the stability of a working device, and eventually its lifetime. When a direct electric current is applied to a material, it affects the mass transport by adding a bias to the atomic diffusive motion. This effect, called electromigration, can play an important role on the dynamics and the morphological stability of nanostructures at surfaces. In this work we have studied the motion of single-step holes and islands under the effect of an electric field on Si(100), in real time, by Low Energy Electron Microscopy (LEEM). The details of the motion depend on the strong diffusion anisotropy of the Si dimer rows. Studying the velocity and the shape of the nanostructures, we discuss a model to explain and guide the motion of holes and islands. Electron energy lower than 20 eV High imaging dynamics (0.1 s per image) LEEM This work was performed in the framework of the ANR grant HOLOLEEM (ANR-15-CE09-0012). We are grateful to B. Ranguelov and M. Michailov for stimulating discussions had in the framework of the PHC Rila project (38663TB)) project. The poster is based on the paper: "2D nanostructure motion on anisotropic surfaces controlled by electromigration", S. Curiotto,
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