OBIC measurements on 1.3 kV 6H-SiC bipolar diodes protected by Junction Lateral Extension
Résumé
Due to its good electrical properties, mainly a high critical electric field and a large bandgap, silicon carbide has demonstrated potentialities for high power devices. We have designed and realised bipolar diodes to sustain a reverse voltage of about 1.3 kV. We present below the experimental breakdown voltage we achieved, and results of OBIC measurements.
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