OBIC measurements on 1.3 kV 6H-SiC bipolar diodes protected by Junction Lateral Extension - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2002

OBIC measurements on 1.3 kV 6H-SiC bipolar diodes protected by Junction Lateral Extension

Résumé

Due to its good electrical properties, mainly a high critical electric field and a large bandgap, silicon carbide has demonstrated potentialities for high power devices. We have designed and realised bipolar diodes to sustain a reverse voltage of about 1.3 kV. We present below the experimental breakdown voltage we achieved, and results of OBIC measurements.
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hal-02464381 , version 1 (03-02-2020)

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  • HAL Id : hal-02464381 , version 1

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S.R. Wang, Christophe Raynaud, Dominique Planson, Mihai Lazar, Jean-Pierre Chante. OBIC measurements on 1.3 kV 6H-SiC bipolar diodes protected by Junction Lateral Extension. European Conference on Silicon Carbide and Related Materials (ECSCRM 2002), Sep 2002, Linköping, Sweden. ⟨hal-02464381⟩
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