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Communication Dans Un Congrès Année : 2002

SiC On Insulator as substrate for power Schottky diodes

Résumé

Recently INFINEON and other companies announced the market introduction of their SiC Schottky rectifiers in the range of 600 V several amperes. This announcement allows the design of power electronic systems with a cooling effort drastically reduced than required before, which is a great improvement for electronics in terms of cost and efficiency. However SiC components are still checked by an expensive substrate supplying and by the small 3 inches size of the SiC wafers. SiCOI substrate presents the capability of large sized handle wafers, allowing the utilization of 4,6 or 8 inches facilities. In addition the fabrication of numerous SiCOI substrates requires a single SiC substrate as illustrated in figure 1. This later point should make SiCOI a low cost SiC substrate. The purpose of this article is to give the first electrical characteristics of a Schottky rectifier on that promising substrate.
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Dates et versions

hal-02464356 , version 1 (03-02-2020)

Identifiants

  • HAL Id : hal-02464356 , version 1

Citer

N. Daval, F Templier, F. Letertre, Dominique Planson, Léa Di Cioccio, et al.. SiC On Insulator as substrate for power Schottky diodes. European Conference on Silicon Carbide and Related Materials (ECSCRM 2002), Sep 2002, Linköping, Sweden. ⟨hal-02464356⟩
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