SiC On Insulator as substrate for power Schottky diodes
Résumé
Recently INFINEON and other companies announced the market introduction of their SiC Schottky rectifiers in the range of 600 V several amperes. This announcement allows the design of power electronic systems with a cooling effort drastically reduced than required before, which is a great improvement for electronics in terms of cost and efficiency. However SiC components are still checked by an expensive substrate supplying and by the small 3 inches size of the SiC wafers.
SiCOI substrate presents the capability of large sized handle wafers, allowing the utilization of 4,6 or 8 inches facilities. In addition the fabrication of numerous SiCOI substrates requires a single SiC substrate as illustrated in figure 1. This later point should make SiCOI a low cost SiC substrate. The purpose of this article is to give the first electrical characteristics of a Schottky rectifier on that promising substrate.
Domaines
Energie électriqueOrigine | Fichiers produits par l'(les) auteur(s) |
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