Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2016
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hal-02462684 , version 1 (31-01-2020)

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  • HAL Id : hal-02462684 , version 1

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Hadhemi Lakhdhar, Nathalie Labat, Arnaud Curutchet, N. Defrance, Marie Lesecq, et al.. Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress. ESREF 2016, Sep 2016, Händel-Halle, Germany. ⟨hal-02462684⟩
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