Large spin Hall effect and tunneling magnetoresistance in iridium-based magnetic tunnel junctions - Archive ouverte HAL
Article Dans Une Revue Science China Physics, Mechanics & Astronomy Année : 2020
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hal-02447296 , version 1 (21-01-2020)

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Jiaqi Zhou, Hangyu Zhou, Arnaud Bournel, Weisheng Zhao. Large spin Hall effect and tunneling magnetoresistance in iridium-based magnetic tunnel junctions. Science China Physics, Mechanics & Astronomy, 2020, 63 (1), ⟨10.1007/s11433-019-9433-4⟩. ⟨hal-02447296⟩
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