Interaction of Stearic Acid Deposited on Silicon Samples With Ar/N 2 and Ar/O 2 Atmospheric Pressure Microwave Post-discharges - Archive ouverte HAL
Article Dans Une Revue Plasma Processes and Polymers Année : 2009

Interaction of Stearic Acid Deposited on Silicon Samples With Ar/N 2 and Ar/O 2 Atmospheric Pressure Microwave Post-discharges

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Plasmas

Dates et versions

hal-02447134 , version 1 (21-01-2020)

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Cédric Noël, David Duday, Stéphane Verdier, Patrick Choquet, Thierry Belmonte, et al.. Interaction of Stearic Acid Deposited on Silicon Samples With Ar/N 2 and Ar/O 2 Atmospheric Pressure Microwave Post-discharges. Plasma Processes and Polymers, 2009, 6 (S1), pp.S187-S192. ⟨10.1002/ppap.200930506⟩. ⟨hal-02447134⟩
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